Impact of in-situ Cd saturation MOCVD grown CdTe solar cells on As doping and VOC
In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 °C, to investigate the impact on As doping and device VOC. Device characterization showed conversion efficiency of ∼14%, and VOC of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 °C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 °C (in contrast with the standard 420 °C) for 10 min, device efficiency improved to ∼17% with a high VOC of 877 mV. As a result, ∼100 mV boost in VOC from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.
Funding
Doped Emitters to Unlock Lowest Cost Solar Electricity
Engineering and Physical Sciences Research Council
Find out more...European Regional Development Fund
Welsh European Funding Office
First Solar, Inc.
History
School
- Mechanical, Electrical and Manufacturing Engineering
Research Unit
- Centre for Renewable Energy Systems Technology (CREST)
Published in
IEEE Journal of PhotovoltaicsVolume
12Issue
6Pages
1296 - 1302Publisher
Institute of Electrical and Electronics Engineers (IEEE)Version
- VoR (Version of Record)
Rights holder
© The AuthorsPublisher statement
This is an Open Access Article. It is published by IEEE under the Creative Commons Attribution 4.0 International Licence (CC BY). Full details of this licence are available at: https://creativecommons.org/licenses/by/4.0/Acceptance date
2022-07-19Publication date
2022-08-22Copyright date
2022ISSN
2156-3381eISSN
2156-3403Publisher version
Language
- en