Temperature control of diffusive memristor hysteresis and artificial neuron spiking
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, resistive switching occurs because of the sequential formation and rupture of conduction filaments between device electrodes due to drift and diffusion of silver nanoparticles in the dielectric matrix. This process is governed by the applied electric voltage. Here, both in experiment and in simulations we demonstrate that varying temperature offers an efficient control of memristor states and charges transport in the device. By raising and lowering the device temperature it was shown that the memristive state can be reset, even if it cannot be done by varying the applied voltage. In addition, a change in the spiking regime was observed when the spiking was generated in the memristive circuit at a constant applied voltage, but different device temperatures. Our simulations demonstrate a good qualitative agreement with the experiments, and help to explain the effects reported.
Funding
Neuromorphic memristive circuits to simulate inhibitory and excitatory dynamics of neuron networks: from physiological similarities to deep learning
Engineering and Physical Sciences Research Council
Find out more...History
School
- Science
- Aeronautical, Automotive, Chemical and Materials Engineering
Department
- Physics
- Materials
- Chemistry
Published in
Physical Review AppliedVolume
19Issue
2Publisher
American Physical SocietyVersion
- AM (Accepted Manuscript)
Rights holder
© American Physical SocietyPublisher statement
This paper by D.P. Pattnaik, Y. Ushakov, Z. Zhou, P. Borisov, M.D. Cropper, U.W. Wijayantha, A.G. Balanov, and S.E. Savel′ev, Temperature Control of Diffusive Memristor Hysteresis and Artificial Neuron Spiking, Phys. Rev. Applied 19, 024065, was published by American Physical Society (APS) and the definitive published version is available at https://doi.org/10.1103/PhysRevApplied.19.024065.Acceptance date
2023-01-20Publication date
2023-02-24Copyright date
2023eISSN
2331-7019Publisher version
Language
- en