Atmospheric pressure plasma chemical deposition by using dielectric barrier discharge system

Hong, Jungmi

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https://hdl.handle.net/2142/44156 Copy

Description

Title

Atmospheric pressure plasma chemical deposition by using dielectric barrier discharge system

Author(s)

Hong, Jungmi

Issue Date

2013-05-24T21:52:52Z

Director of Research (if dissertation) or Advisor (if thesis)

Ruzic, David N.

Department of Study

Nuclear, Plasma, & Rad Engr

Discipline

Nuclear, Plasma, Radiolgc Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

• Plasma Chemical Deposition
• Dielectric Barrier Discharge
• Atmospheric Pressure Plasma

Abstract

During the last decade atmospheric pressure plasma sources have been very successful in various practical applications such as surface cleaning, modification and sterilization. Lately thin film deposition and etching applications of atmospheric plasmas are being extensively investigated. For efficient film deposition process, a high frequency power source and an additional heating scheme are generally preferred even in atmospheric pressure plasma process. However, considering the weak thermal property of the polymeric substrates, different approaches are necessary for the thin film applications. In this work, commercial parallel-plate type and newly designed cylindrical DBD (Dielectric Barrier Discharge) torch have been characterized and compared based on the electrical and optical diagnostics results. The impact of electric field on APCVD (Atmospheric pressure plasma chemical vapor deposition) process was investigated by using two typical electrode configurations of cylindrical dielectric barrier discharge. With HMDSO (hexamethyldisiloxane) monomer source, uniform and dense SiOx (silicon oxide) film was deposited on silicon wafer and polypropylene substrate. A dense, smooth film was deposited on the Si substrate with a direct plasma system rather than a remote plasma system. In terms of chemical composition, the film prepared by direct plasma is desirable as the film was inorganic with enough bonding like Si-O-Si, Si-OH while the ones prepared with remote plasma was observed to be much more organic by having a larger number of methyl group on the film surface. In order to adapt the CVD process for thermally weak thin polymeric substrate, another dielectric layer with higher dielectric constant was added underneath the polymer sample on top of the ground electrode. As a result of which the total active capacitance and charge density was enhanced even under lower applied voltage conditions. The modified recipe and configuration provided a good film quality without any film damage.

Graduation Semester

2013-05

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http://hdl.handle.net/2142/44156

Copyright and License Information

Copyright 2013 Jungmi Hong

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