Transistor level X-parameter simulations of equalization circuits
Newell, Drew
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https://hdl.handle.net/2142/49409
Description
Title
Transistor level X-parameter simulations of equalization circuits
Author(s)
Newell, Drew
Issue Date
2014-05-30T16:42:31Z
Director of Research (if dissertation) or Advisor (if thesis)
Schutt-Ainé, José E.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
signal integrity
x-parameter
ibis
Abstract
As frequencies have increased in circuits used for communication electronics, signal integrity concepts have become some of the foremost challenges that circuit designers must deal with. Specifically, high-speed links have been the focus of much of the research into mitigating signal integrity issues. To combat the effects of jitter and other signal integrity problems, circuit designers have begun using increasingly more complex circuitry peripheral to the high-speed link. This presents a challenge for system level designers because of their reliance on models accurately characterizing the underlying transistor level design. Existing standards, such as IBIS-AMI, are currently used at the system level to create designs. Alternatively, X-parameters may present a more intuitive and accurate method to generate models that are detailed and that preserve intellectual property.
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