Design of circuits for sub-threshold voltages : implementation of adders

The demand and the need for low-power circuits is an ever increasing trend particularly due to the added overhead of design of efficient cooling systems or more sophisticated and expensive packaging techniques. In most new emerging applications that demand low power consumption such as biomedical implants, wearable devices, micro-sensor nodes and countless others, energy efficiency emphasis far supersedes the traditional focus on improving the speed. Such energy constrained systems can be operated at considerably reduced performance levels in order to save power and extend their battery lifetimes. Sub-Threshold design has proven useful for ultra-low power and low energy applications since the dynamic power is reduced quadratically with supply voltage; the least energy operation usually takes place in the sub-threshold region. This work provides a comprehensive analysis of the CMOS standard cell characterization in the sub-threshold region, layout, logical library extraction, optimization and top-level implementation of 2 of the parallel prefix adders of different word sizes in 45nm technology with comparison between the sub-threshold region and strong inversion regions of operation. The analysis is done on PPA: power (energy), performance and area, the common metrics for any chip design. The switching activities of the circuits were captured using dynamic gate level simulation to perform the time based peak power analysis. Static timing analysis was performed to estimate the delay of the critical path for each circuit. The analysis and results presented in this report will be helpful in choosing a specific adder configuration for an integrated circuit based on the constraints related to its application.