Article (Scientific journals)
Gate control of spin-layer-locking FETs and application to monolayer LuIO
Zhang, Rong; Marrazzo, Antimo; Verstraete, Matthieu et al.
2021In Nano Letters
Peer Reviewed verified by ORBi
 

Files


Full Text
main.pdf
Author preprint (2.03 MB)
Download

We include here only the submitted manuscript


All documents in ORBi are protected by a user license.

Send to



Details



Keywords :
2D materials; Spintronics; Field-effect; Spin-layer locking; Density-functional Theory
Abstract :
[en] A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to $k_R = 0.08 \si{\angstrom}^{-1}$), leading to a $\pi/2$ rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally-known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.
Disciplines :
Physics
Author, co-author :
Zhang, Rong;  Ecole Polytechnique Fédérale de Lausanne - EPFL > Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL)
Marrazzo, Antimo;  University of Trieste > Department of Physics
Verstraete, Matthieu  ;  Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures
Marzari, Nicola;  Ecole Polytechnique Fédérale de Lausanne - EPFL > Theory and Simulation of Materials (THEOS), and National Centre for Computational Design and Discovery of Novel Materials (MARVEL)
Sohier, Thibault ;  Université de Liège - ULiège > Département de physique > Physique des matériaux et nanostructures
Language :
English
Title :
Gate control of spin-layer-locking FETs and application to monolayer LuIO
Publication date :
30 August 2021
Journal title :
Nano Letters
ISSN :
1530-6984
eISSN :
1530-6992
Publisher :
American Chemical Society, United States - District of Columbia
Peer reviewed :
Peer Reviewed verified by ORBi
Funders :
SNSF - Swiss National Science Foundation [CH]
ULiège FSR - Université de Liège. Fonds spéciaux pour la recherche [BE]
Funding text :
The results of this research have been partially achieved using the DECI resource ARCHER UK National Supercomputing Service with sup- port from the PRACE aisbl. Simulation time was also awarded by PRACE (project id. 2020225411) on MareNostrum at Barcelona Supercomputing Center - Centro Nacional de Supercomputacion (The Spanish National Supercomputing Center) and on MARCONI at CINECA Italy (project id. 2016163963). R.Z., A.M., N.M. and T.S. acknowledges support from NCCR MARVEL funded by the Swiss National Science Foundation, R.Z. was supported by the NCCR MARVEL INSPIRE Potentials fellowship. T.S. acknowledges support from the University of Liege under the Special Funds for Research, IPD-STEMA Programme.
Available on ORBi :
since 08 October 2021

Statistics


Number of views
73 (5 by ULiège)
Number of downloads
66 (1 by ULiège)

Scopus citations®
 
2
Scopus citations®
without self-citations
1
OpenCitations
 
3

Bibliography


Similar publications



Contact ORBi