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<Book>
Diffusion mechanism of nickel and point defects in silicon (Japanese journal of applied physocs, vol.21 no.2)

Responsibility Masayuki Yoshida
Material Type Book
Publisher Tokyo
Language English

Holdings


DESIGN LIB., 3F | Books Written by Faculty AAA611/ヨシダマ/23 1982
072031281015782

Bibliographic details

Authors 吉田, 正幸 <ヨシダ、 マサユキ>
ID 1000005229
NCID LB21866082
Created Date 1995.03.01
Modified Date 2005.10.03