New challenges of printed high-к oxide dielectrics

Abstract

High-permittivity (к) oxide dielectrics have been widely demanded concerning the Internet of Things (IoT) requirements, such as flexible large-area manufacturing, energy efficiency, low-cost processes, and sustainable electronics, especially in thin-film transistors (TFTs). From there emerged the necessity of printing energy-efficient (vacuum-free) eco-devices using low-temperature methods (e.g., combustion synthesis, post-treatments) in the production and processing of nanomaterials, thus reducing the human carbon footprint. However, currently the main deposition method used is typically spin-coating which requires higher temperatures and long annealing times, not compatible with the printing industry. Besides the concerns with process integration, the market highly demands high-к dielectrics with great stability and high yield. To surpass these challenges, some crucial parameters in the ink design need to be considered to guarantee successful upscale for large-area electronics manufacturing.