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Título
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Autor(es)
Materia
Impact ionization
Monte Carlo method
InGaAs
Tunneling
Fecha de publicación
2018
Editor
American Institute of Physics
Citación
B. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos (2018). Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis, Journal of Applied Physics 123, 034501 [1-5]
Resumen
[EN]III-V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs
(TFETs) are being explored as promising devices for low-power digital applications. To assist the
development of these devices from the physical point of view, a Monte Carlo (MC) model which
includes impact ionization processes and band-to-band tunneling is presented. The MC simulator
reproduces the I-V characteristics of experimental ungated In0.53Ga0.47As 100 nm PIN diodes, in
which tunneling emerges for lower applied voltages than impact ionization events, thus being
appropriate for TFETs. When the structure is enlarged up to 200 nm, the ON-state is achieved by
means of impact ionization processes; however, the necessary applied voltage is higher, with the
consequent drawback for low-power applications. In InAs PIN ungated structures, the onset of both
impact ionization processes and band-to-band tunneling takes place for similar applied voltages,
lower than 1V; thus they are suitable for the design of low-power I-MOSFETs.
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Colecciones
- GINEAF. Artículos [90]