Broadband near-infrared luminescence from -ray irradiated bismuth-doped Y<inf>4</inf>GeO<inf>8</inf> crystals

Xu, B; Tan, D; Guan, M; Teng, Y; Zhou, J; Qiu, J; Hong, Z

Broadband near-infrared luminescence from -ray irradiated bismuth-doped Y<inf>4</inf>GeO<inf>8</inf> crystals

Xu, B Tan, D Guan, M Teng, Y Zhou, J

Qiu, J Hong, Z

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Publication Type:: Journal Article
Citation:: Journal of the Electrochemical Society, 2011, 158 (9)
Issue Date:: 2011-08-03

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Field	Value	Language
dc.contributor.author	Xu, B	en_US
dc.contributor.author	Tan, D	en_US
dc.contributor.author	Guan, M	en_US
dc.contributor.author	Teng, Y	en_US
dc.contributor.author	Zhou, J https://orcid.org/0000-0002-0605-5745	en_US
dc.contributor.author	Qiu, J	en_US
dc.contributor.author	Hong, Z	en_US
dc.date.issued	2011-08-03	en_US
dc.identifier.citation	Journal of the Electrochemical Society, 2011, 158 (9)	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/10453/116368
dc.description.abstract	Broadband near-infrared emission centered at 1155 nm with full width at half maximum over 300 nm has been observed in -ray irradiated bismuth-doped Y4GeO8 crystals. The luminescence was bleached completely after thermal treatment at 350C for 2 h. Absorption spectra, electron spin resonance spectra, Raman spectra, excitation and emission spectra indicate that valence state change of bismuth was induced by -ray irradiation, and 3P1 → 3P0 transition of Bi ions is responsible for the near-infrared emission. The effect of Bi concentration on the luminescence properties of -ray irradiated samples was also discussed. © 2011 The Electrochemical Society.	en_US
dc.relation.ispartof	Journal of the Electrochemical Society	en_US
dc.relation.isbasedon	10.1149/1.3607428	en_US
dc.subject.classification	Energy	en_US
dc.title	Broadband near-infrared luminescence from -ray irradiated bismuth-doped Y<inf>4</inf>GeO<inf>8</inf> crystals	en_US
dc.type	Journal Article
utslib.citation.volume	9	en_US
utslib.citation.volume	158	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	open_access
pubs.issue	9	en_US
pubs.publication-status	Published	en_US
pubs.volume	158	en_US

Abstract:

Broadband near-infrared emission centered at 1155 nm with full width at half maximum over 300 nm has been observed in -ray irradiated bismuth-doped Y4GeO8 crystals. The luminescence was bleached completely after thermal treatment at 350C for 2 h. Absorption spectra, electron spin resonance spectra, Raman spectra, excitation and emission spectra indicate that valence state change of bismuth was induced by -ray irradiation, and 3P1 → 3P0 transition of Bi ions is responsible for the near-infrared emission. The effect of Bi concentration on the luminescence properties of -ray irradiated samples was also discussed. © 2011 The Electrochemical Society.

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