Nucleation and chemical vapor deposition growth of polycrystalline diamond on aluminum nitride: Role of surface termination and polarity

Cervenka, J; Lau, DWM; Dontschuk, N; Shimoni, O; Silvestri, L; Ladouceur, F; Duvall, SG; Prawer, S

Nucleation and chemical vapor deposition growth of polycrystalline diamond on aluminum nitride: Role of surface termination and polarity

Cervenka, J Lau, DWM Dontschuk, N Shimoni, O

Silvestri, L Ladouceur, F Duvall, SG Prawer, S

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Publication Type:: Journal Article
Citation:: Crystal Growth and Design, 2013, 13 (8), pp. 3490 - 3497
Issue Date:: 2013-08-07

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Field	Value	Language
dc.contributor.author	Cervenka, J	en_US
dc.contributor.author	Lau, DWM	en_US
dc.contributor.author	Dontschuk, N	en_US
dc.contributor.author	Shimoni, O https://orcid.org/0000-0001-8822-1024	en_US
dc.contributor.author	Silvestri, L	en_US
dc.contributor.author	Ladouceur, F	en_US
dc.contributor.author	Duvall, SG	en_US
dc.contributor.author	Prawer, S	en_US
dc.date.issued	2013-08-07	en_US
dc.identifier.citation	Crystal Growth and Design, 2013, 13 (8), pp. 3490 - 3497	en_US
dc.identifier.issn	1528-7483	en_US
dc.identifier.uri	http://hdl.handle.net/10453/28721
dc.description.abstract	We have investigated the growth and atomic interface structures of diamond on aluminum nitride (AlN). The two-step chemical vapor deposition technique is used to control diamond nucleation density, crystal size, and AlN surface orientation and polarity. Highly uniform diamond layers with a nucleation density in the range of 105-1011 cm-2 and a grain size of 0.1-5 μm are fabricated. Crystallographically abrupt interfaces between polycrystalline diamond and single-crystal AlN(0001) layers have been observed via high-resolution transmission electron microscopy and electron energy-loss spectroscopy. A majority of the diamond crystals have been found to have the diamond(111)/AlN(0001) interface relationship. Atomistic models of the bonding mechanism at the heterointerface are used to elucidate experimental observations and the role of hydrogen plasma on the growth of diamond on AlN. Nonpolar and semipolar AlN surfaces have been found to have higher resistance to process plasma and led to better crystallinity of the diamond/AlN heterointerfaces. These results underline the potential of nonpolar and semipolar AlN surfaces for the growth of high-crystal quality diamond/AlN heterointerfaces. © 2013 American Chemical Society.	en_US
dc.relation.ispartof	Crystal Growth and Design	en_US
dc.relation.isbasedon	10.1021/cg400383t	en_US
dc.subject.classification	Inorganic & Nuclear Chemistry	en_US
dc.title	Nucleation and chemical vapor deposition growth of polycrystalline diamond on aluminum nitride: Role of surface termination and polarity	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	13	en_US
utslib.for	091202 Composite and Hybrid Materials	en_US
utslib.for	0302 Inorganic Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	13	en_US

Abstract:

We have investigated the growth and atomic interface structures of diamond on aluminum nitride (AlN). The two-step chemical vapor deposition technique is used to control diamond nucleation density, crystal size, and AlN surface orientation and polarity. Highly uniform diamond layers with a nucleation density in the range of 105-1011 cm-2 and a grain size of 0.1-5 μm are fabricated. Crystallographically abrupt interfaces between polycrystalline diamond and single-crystal AlN(0001) layers have been observed via high-resolution transmission electron microscopy and electron energy-loss spectroscopy. A majority of the diamond crystals have been found to have the diamond(111)/AlN(0001) interface relationship. Atomistic models of the bonding mechanism at the heterointerface are used to elucidate experimental observations and the role of hydrogen plasma on the growth of diamond on AlN. Nonpolar and semipolar AlN surfaces have been found to have higher resistance to process plasma and led to better crystallinity of the diamond/AlN heterointerfaces. These results underline the potential of nonpolar and semipolar AlN surfaces for the growth of high-crystal quality diamond/AlN heterointerfaces. © 2013 American Chemical Society.

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http://hdl.handle.net/10453/28721