Interstitial Ti for intermediate band formation in Ti-supersaturated silicon
Entity
UAM. Departamento de Física AplicadaPublisher
American Institute of Physics.Date
2012-12-01Citation
10.1063/1.4768274
Journal of Applied Physics 112.11 (2012): 113514
ISSN
0021-8979 (print); 1089-7550 (online)DOI
10.1063/1.4768274Funded by
Authors would like to acknowledge the C. A. I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation experiments, Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, and C.M.A.M. of the Universidad Autónoma de Madrid for RBS measurements. This work was partially supported by the Project NUMANCIA II (Grant No.S-2009/ENE/1477) funded by the Comunidad de Madrid.Project
Comunidad de Madrid. S2009/ENE-1477/NUMANCIA-2Editor's Version
http://dx.doi.org/10.1063/1.4768274Subjects
Rutherford backscattering; Ion implantion; Silicon; Interstitial defects; Lattice theory; FísicaNote
The following article appeared inJournal of Applied Physics 112.11 (2012): 113514 and may be found at http://scitation.aip.org/content/aip/journal/jap/112/11/10.1063/1.4768274Rights
© 2012 American Institute of Physics.Abstract
We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites.
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Google Scholar:Pastor, David
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Olea, Javier
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Muñoz-Martín, Angel
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Climent Font, Aurelio
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Mártil, Ignacio
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González-Díaz, Germán
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