Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering
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Data
2008-07-14
Autores
Pereira, Andre Luis de Jesus [UNESP]
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Editor
Universidade Estadual Paulista (Unesp)
Resumo
Atualmente a incorporação de Mn ao GaAs apresenta interesse destacado pela demonstrada capacidade do Mn em produzir buracos livres e ferromagnetismo nos compostos 'Ga IND. 1-x Mn IND. xAs' (0,00 < x '< OU =' 0,05) . Acredita-se que nestes materiais os buracos associados à presença de sítios Mn+2 são também intermediários da interação ferromagnética entre os íons de Mn da rede, tornando o 'Ga IND. 1-x Mn IND. xAs' um candidato interessante para a produção de dispositivos com efetivo controle de spin (spintrônica). Atualmente, a produção de 'Ga IND. 1-x Mn IND. xAs' ferromagnético é em sua maioria feita através da técnica de MBE. Neste trabalho foram produzidos e analisados filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' com diferentes concentrações de Mn (0,000 ≤ x ≤ 0,081) obtidos através da técnica de RF magnetron sputtering. O Mn foi incorporado aos filmes através de co-sputtering de um alvo de GaAs monocristalino recoberto por pequenas lâminas de Mn, em atmosfera de Ar ou Ar+'H IND. 2'. Foram investigados em detalhe os efeitos de diferentes concentrações de Mn sobre as propriedades estruturais e ópticas dos filmes de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering. A caracterização estrutural foi realizada basicamente através de medidas de difração de raios-X e a caracterização óptica através de medidas de transmitância na região compreendida entre o ultravioleta (2,0 eV) e o infravermelho próximo (0,5 eV). Também foram realizadas medidas de transmitância no infravermelho (0,05 a 0,50 eV) com o intuito de analisar a influência do Mn e do H nas propriedades vibracionais dos filmes. Os resultados revelam que os filmes analisados são paramagnéticos e que suas propriedades são fortemente influenciadas pela hidrogenação. Os filmes hidrogenados apresentam uma expansão aproximadamente...
The Mn incorporation in GaAs presents nowadays bold interest due to the demonstrated capability of Mn to produce free holes and ferromagnetism in 'Ga IND. 1-x Mn IND. xAs' compounds (0.00 < x ≤ 0.05). It is believed that in these materials the holes associated to Mn+2 sites mediate of the ferromagnetic interaction between the net Mn ions, making the 'Ga IND. 1-x Mn IND. xAs' an interesting candidate to the production of devices with effective spin control. The growth of ferromagnetic 'Ga IND. 1-x Mn IND. xAs' films is generally achieved using molecular beam epitaxy. In this work nanocrystalline 'Ga IND. 1-x Mn IND. xAs' films (0.000 ≤ x ≤ 0.081) were produced alternatively by RF magnetron sputtering. The films were deposited using a monocrystalline GaAs target and Ar or Ar+'H IND. 2' atmospheres. The Mn was incorporated in the films by cosputtering of small Mn slabs placed onto the GaAs target. The effect of the different Mn concentrations in the structural and optical properties of 'Ga IND. 1-x Mn IND. xAs' films have been investigated in detail. X-ray diffraction and transmittance in the 0.5-2.5 eV range were used in the structural and optical analysis respectively. Infrared transmittance in the 0.05 to 0.50 eV range was used to analyze the Mn and H influence in vibrational properties of the films. The results show that the analyzed nanocrystalline films are paramagnetic and their properties are strongly influenced by the hydrogenation. A lattice parameter linear expansion with the incorporated Mn concentration was observed in hydrogenated films similarly to the reported results for ferromagnetic films. The hydrogenated films also display a lower defect density in the gap and lower Urbach disorder parameter, allowing the more direct observation of the influence of Mn progressive incorporation in the films.
The Mn incorporation in GaAs presents nowadays bold interest due to the demonstrated capability of Mn to produce free holes and ferromagnetism in 'Ga IND. 1-x Mn IND. xAs' compounds (0.00 < x ≤ 0.05). It is believed that in these materials the holes associated to Mn+2 sites mediate of the ferromagnetic interaction between the net Mn ions, making the 'Ga IND. 1-x Mn IND. xAs' an interesting candidate to the production of devices with effective spin control. The growth of ferromagnetic 'Ga IND. 1-x Mn IND. xAs' films is generally achieved using molecular beam epitaxy. In this work nanocrystalline 'Ga IND. 1-x Mn IND. xAs' films (0.000 ≤ x ≤ 0.081) were produced alternatively by RF magnetron sputtering. The films were deposited using a monocrystalline GaAs target and Ar or Ar+'H IND. 2' atmospheres. The Mn was incorporated in the films by cosputtering of small Mn slabs placed onto the GaAs target. The effect of the different Mn concentrations in the structural and optical properties of 'Ga IND. 1-x Mn IND. xAs' films have been investigated in detail. X-ray diffraction and transmittance in the 0.5-2.5 eV range were used in the structural and optical analysis respectively. Infrared transmittance in the 0.05 to 0.50 eV range was used to analyze the Mn and H influence in vibrational properties of the films. The results show that the analyzed nanocrystalline films are paramagnetic and their properties are strongly influenced by the hydrogenation. A lattice parameter linear expansion with the incorporated Mn concentration was observed in hydrogenated films similarly to the reported results for ferromagnetic films. The hydrogenated films also display a lower defect density in the gap and lower Urbach disorder parameter, allowing the more direct observation of the influence of Mn progressive incorporation in the films.
Descrição
Palavras-chave
Ciência dos materiais, Nanocristalino, Nanocrystaline
Como citar
PEREIRA, Andre Luis de Jesus. Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'Ga IND. 1-x Mn IND. xAs' preparados por sputtering. 2008. 75 f. Dissertação (mestrado) - Universidade Estadual Paulista, Faculdade de Ciências de Bauru, 2008.