標題: BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL
作者: CHANG, YH
YEH, JJ
SHEU, YM
WANG, CC
CHEN, TC
CHANG, KH
LEE, CP
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-四月-1994
摘要: Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states.
URI: http://hdl.handle.net/11536/2547
ISSN: 0038-1101
期刊: SOLID-STATE ELECTRONICS
Volume: 37
Issue: 4-6
起始頁: 673
結束頁: 675
顯示於類別:期刊論文