| Title: | BARRIER EFFECT OF E-BEAM EVAPORATED TUNGSTEN INTERLAYER IN AL/W/PTSI METALLIZATION LAYER |
| Authors: | CHIOU, BS LO, HS CHANG, PH 電控工程研究所 Institute of Electrical and Control Engineering |
| Issue Date: | 1-Sep-1988 |
| URI: | http://dx.doi.org/10.1007/BF02652125 http://hdl.handle.net/11536/4490 |
| ISSN: | 0361-5235 |
| DOI: | 10.1007/BF02652125 |
| Journal: | JOURNAL OF ELECTRONIC MATERIALS |
| Volume: | 17 |
| Issue: | 5 |
| Begin Page: | 397 |
| End Page: | 404 |
| Appears in Collections: | Articles |
- The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector / Horng, GJ;Chang, CY;Ho, C;Lee, CY;Huang, TY
- Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector / Horng, GJ;Chang, CY;Chang, T;Ho, C;Wu, CS
- EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE / TSUI, BY;TSAI, JY;WU, TS;CHEN, MC
- Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate / Hsiao, Yu-Lin;Wang, Yi-Jie;Chang, Chia-Ao;Weng, You-Chen;Chen, Yen-Yu
- High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions / Lin, HC;Wang, MF;Hou, FJ;Lin, HN;Lu, CY
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