標題: 雙脈衝實驗架構用於氮化鎵功率電晶體動態特性量測與模擬
Measurement and Simulation of Dynamic Characteristics of GaN Power Transistors by DPT
作者: 吳維綱
Wu,Wei-Gang
成維華
鄭時龍
Chieng,Wei-Hua
Jeng,Shyr-Long
機械工程系所
關鍵字: 雙脈衝訊號實驗架構;氮化鎵;動態特性;double-pulse tester;GaN;dynamic characteristics
公開日期: 2014
摘要: 了解雙脈衝實驗架構原理,分析架構中各元件功用,並利用雙脈衝實驗架構量測交通大學自製氮化鎵開關元件動態特性,包括動態切換時間參數和動態切換損失參數,接著透過SPICE模擬軟體建立所使用的二極體模型和氮化鎵開關模型與模擬雙脈衝實驗,最後比較雙脈衝實驗模擬結果與實驗開關波形上是否一致。
This paper describes the principles of double-pulse tester (DPT) and analyze the function of each component in the architecture. Then, apply the double-pulse tester to measure the dynamic characteristics of the NCTU GaN power transistor ,which include dynamic switching time parameters and dynamic switching loss parameters. Then, use the SPICE simulation software to build the model of diode and GaN power transistor to simulate the double-pulse tester. Finally, compare the result of simulation with experiment and check whether the results are consistent.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT070151099
http://hdl.handle.net/11536/75892
顯示於類別:畢業論文