Modeling the point-spread function in helium-ion lithography
Author(s)
Winston, Donald; Ferrera, J.; Battistella, L.; Vladar, A. E.; Berggren, Karl K.
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We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary electron (SE) yield in helium-ion microscopy. This approach traces along SRIM-produced helium-ion trajectories, generating and simulating trajectories for SEs using a Monte Carlo method. We found, both through simulation and experiment, that the spatial distribution of energy deposition in a resist as a function of radial distance from beam incidence, i.e. the point spread function, is not simply a sum of Gauss functions.
Date issued
2011-09Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Scanning
Publisher
Wiley Blackwell
Citation
Winston, Donald et al. “Modeling the Point-Spread Function in Helium-Ion Lithography.” Scanning 34.2 (2012): 121–128.
Version: Author's final manuscript
ISSN
0161-0457
1932-8745