Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
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We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.
Date issued
2013-04Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Laboratory for Manufacturing and ProductivityJournal
Energy & Environmental Science
Publisher
Royal Society of Chemistry
Citation
Lee, Yun Seog, Jaeyeong Heo, Sin Cheng Siah, Jonathan P. Mailoa, Riley E. Brandt, Sang Bok Kim, Roy G. Gordon, and Tonio Buonassisi. “Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells.” Energy & Environmental Science 6, no. 7 (2013): 2112. © Royal Society of Chemistry
Version: Final published version
ISSN
1754-5692
1754-5706