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Record link: 
http://hdl.handle.net/20.500.12708/76713
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Title: 
Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs
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Citation: 
Tyaginov, S. E., Chasin, A., Makarov, A., El-Sayed, A.-M., Jech, M., De Keersgieter, A., Eneman, G., Vandemaele, M., Franco, J., Linten, D., & Kaczer, B. (2019). Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs. In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 565–566). http://hdl.handle.net/20.500.12708/76713
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
Tyaginov, S. E. 
Chasin, A 
Makarov, Alexander 
El-Sayed, Al-Moatasem 
Jech, Markus 
De Keersgieter, An 
Eneman, G. 
Vandemaele, Michiel 
Franco, J. 
Linten, D 
Kaczer, Ben 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) 
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Date (published): 
2019
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Event name: 
International Conference on Solid State Devices and Materials (SSDM) 
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Event date: 
2-Sep-2019 - 5-Sep-2019
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Event place: 
Fukuoka, Japan
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Number of Pages: 
2
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Peer reviewed: 
Yes
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Research Areas: 
Modelling and Simulation: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Conference Paper

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