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Record link: 
http://hdl.handle.net/20.500.12708/77347
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Title: 
Single-Event Transients in a PIN Photodiode and a Single-Photon Avalanche Diode Integrated in 0.35μm CMOS
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Citation: 
Hofbauer, M., Steindl, B., Schneider-Hornstein, K., Goll, B., Voss, K.-O., & Zimmermann, H. (2018). Single-Event Transients in a PIN Photodiode and a Single-Photon Avalanche Diode Integrated in 0.35μm CMOS. In 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS). Radiation Effects on Components & Systems Conference (RADECS), Bremen, EU. https://doi.org/10.1109/radecs45761.2018.9328700
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Publisher DOI: 
10.1109/radecs45761.2018.9328700
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Authors: 
Hofbauer, Michael 
Steindl, Bernhard 
Schneider-Hornstein, Kerstin 
Goll, Bernhard 
Voss, Kay-Obbe 
Zimmermann, Horst 
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Organisational Unit: 
E354-02 - Forschungsbereich Integrated Circuits 
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Published in: 
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 
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Date (published): 
2018
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Event name: 
Radiation Effects on Components & Systems Conference (RADECS) 
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Event date: 
19-Sep-2016 - 23-Sep-2016
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Event place: 
Bremen, EU
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Number of Pages: 
5
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Peer reviewed: 
Yes
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Keywords: 
PIN photodiode; single-event transient (SET); single-photon avalanche diode (SPAD); avalanche photo diode (APD); heavy ions; micro-beam; CMOS.
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Abstract: 
Single-event transients (SETs) in a PIN photodiode and a single-photon avalanche diode (SPAD), both fabricated in the same 0.35µm CMOS process, are compared under heavy ion irradiation. The experimental results suggest that mainly the low-doped epitaxial layer defines the amount of collected charge. High current peaks at the output of the photodetectors, necessitate precautions in the quencher and read-out circuit design.
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Research Areas: 
Photonics: 50%
Sensor Systems: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Conference Paper

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