Parylene-C passivated carbon nanotube flexible transistors

Permanent URL: http://hdl.handle.net/2047/d20000964
Title:
Parylene-C passivated carbon nanotube flexible transistors
Creator:
Selvarasah, Selvapraba (Author)
Li, Xinghui (Author)
Busnaina, Ahmed A. (Author)
Dokmeci, Mehmet R. (Author)
Publisher:
American Institute of Physics
Copyright date:
2010
Type of resource:
Text
Genre:
Articles
Format:
electronic
Digital origin:
born digital
Abstract/Description:
Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the encapsulation of CNT devices such as field effect transistors, p-n diodes, and logic circuits fabricated on flexible substrates.
Comments:
Originally published in Applied Physics Letters v.97 no.15 (2010), p.153120. doi:10.1063/1.3499758
Subjects and keywords:
Nanotubes
Nanoelectronics
Thin film transistors
carbon nanotubes
encapsulation
nanotube devices
passivation
polymer films
thin film transistors
Electronic Devices and Semiconductor Manufacturing
Nanoscience and Nanotechnology
Permanent Link:
http://hdl.handle.net/2047/d20000964

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