Soung Yee, Lawrence
[UCL]
Álvarez, P.
[Universitat Autònoma de Barcelona]
Martin, E.
[Universitat Autònoma de Barcelona]
Cortina Gil, Eduardo
[UCL]
Ferrer, C.
[Universitat Autònoma de Barcelona]
A monolithic pixel detector named TRAPPISTe-2 has been developed in Silicon-on-Insulator (SOI) technology. A p-n junction is implanted in the bottom handle wafer and connected to readout electronics integrated in the top active layer. The two parts are insulated from each other by a buried oxide layer resulting in a monolithic detector. Two small pixel matrices have been fabricated: one containing a 3-transistor readout and a second containing a charge sensitive amplifier readout. These two readout structures have been characterized and the pixel matrices were tested with an infrared laser source. The readout circuits are adversely affected by the backgate effect, which limits the voltage that can be applied to the metal back plane to deplete the sensor, thus narrowing the depletion width of the sensor. Despite the low depletion voltages, the integrated pixel matrices were able to respond to and track a laser source. © 2013 Elsevier B.V.
Bibliographic reference |
Soung Yee, Lawrence ; Álvarez, P. ; Martin, E. ; Cortina Gil, Eduardo ; Ferrer, C.. Test of the TRAPPISTe monolithic detector system. In: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, Vol. 731, p. 141-145 (2013) |
Permanent URL |
http://hdl.handle.net/2078.1/160624 |