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Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap
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| Document type | Article de périodique (Journal article) – Article de recherche |
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| Access type | Accès libre |
| Publication date | 2008 |
| Language | Anglais |
| Journal information | "Journal of Applied Physics" - Vol. 104, no.10, p. 103523 (2008) |
| Peer reviewed | yes |
| Publisher | American Institute of Physics |
| issn | 0021-8979 |
| e-issn | 1089-7550 |
| Publication status | Publié |
| Affiliation | UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| Links |
| Bibliographic reference | Reckinger, N. ; Tang, Xiaohui ; Dubois, E. ; Godey, S. ; Wallart, X. ; et. al. Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap . In: Journal of Applied Physics, Vol. 104, no.10, p. 103523 (2008) |
|---|---|
| Permanent URL | http://hdl.handle.net/2078.1/239714 |