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Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
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Shaik, Rameez Raja
Chandrasekar, L.
Raskin, Jean-Pierre
[UCL]
Pradhan, K.P.
Raskin, Jean-Pierre
[UCL]
Pradhan, K.P.
| Document type | Article de périodique (Journal article) – Article de recherche |
|---|---|
| Access type | Accès libre |
| Publication date | 2022 |
| Language | Anglais |
| Journal information | "Microelectronics Journal" - Vol. 121, p. 105365 (2022) |
| Peer reviewed | yes |
| Publisher | Elsevier BV |
| issn | 0026-2692 |
| Publication status | Publié |
| Affiliation | UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| Keywords | General Engineering |
| Links |
| Bibliographic reference | Shaik, Rameez Raja ; Chandrasekar, L. ; Raskin, Jean-Pierre ; Pradhan, K.P.. Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET. In: Microelectronics Journal, Vol. 121, p. 105365 (2022) |
|---|---|
| Permanent URL | http://hdl.handle.net/2078.1/269236 |