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Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs

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Vanbrabant, Martin [UCL] Raskin, Jean-Pierre [UCL] Flandre, Denis [UCL] Kilchytska, Valeriya [UCL]

This work studies the thermal cross-coupling between two side-by-side UTBB (ultra-thin body and ultra-thin BOX) fully-depleted Silicon-on-Insulator (FD-SOI) MOSFETs. Due to the operation (i.e. heating) of the neighbor (actuator) device, the temperature of the measured device increases, which deteriorates its electrical parameters. This degradation is studied as a function of the bias applied to (i.e. power dissipated by) the neighbor device on main digital (SS, VTh and Ion/Ioff) and analog (gm, gm/Id and Av) Figures of Merit as well as the 2nd and 3rd order harmonic distortions (HD2 and HD3).

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès libre
Publication date 2023
Language Anglais
Journal information "Solid - State Circuits" - Vol. 2023, p. 108623 (2023)
Peer reviewed yes
Publisher I E E E
issn 0038-1101
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Links
Bibliographic reference Vanbrabant, Martin ; Raskin, Jean-Pierre ; Flandre, Denis ; Kilchytska, Valeriya. Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs. In: Solid - State Circuits, Vol. 2023, p. 108623 (2023)
Permanent URL http://hdl.handle.net/2078.1/283154