Impact of crosstalk into high resistivity silicon substrate on the RF performance of SOI MOSFET

Crosstalk propagation through silicon substrate is a serious limiting factor on the performance of the RF devices and circuits. In this work, substrate crosstalk into high resistivity silicon substrate is experimentally analyzed and the impact on the RF behavior of silicon-on-insulator (SOI) MOS transistors is discussed. The injection of a 10 V peak-to-peak single tone noise signal at a frequency of 3 MHz ( fnoise) generates two sideband tones of *−56 dBm separated by fnoise from the RF output signal of a partially depleted SOI MOSFET at 1 GHz and 4.1 dBm. The efficiency of the introduction of a trap-rich polysilicon layer located underneath the buried oxide (BOX) of the high resistivity (HR) SOI wafer in the reduction of the sideband noise tones is demonstrated. An equivalent circuit to model and analyze the generation of these sideband noise tones is proposed.