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Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures
| Title: | Electrochemical Processes for Formation, Processing and Gate Control of III-V Semiconductor Nanostructures |
| Authors: | Hasegawa, Hideki Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Keywords: | III-V semiconductors | | anodic etching | | nanopore | | electrodeposition | | Schottky barrier |
| Issue Date: | 20-May-2005 |
| Publisher: | Elsevier |
| Journal Title: | Electrochimica Acta |
| Volume: | 50 |
| Issue: | 15 |
| Start Page: | 3015 |
| End Page: | 3027 |
| Publisher DOI: | 10.1016/j.electacta.2004.11.066 |
| Abstract: | This paper reviews recent efforts by authors’ group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>- oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. |
| Relation: | http://www.sciencedirect.com/science/journal/00134686 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/8383 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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