Interaction of C$_{60}$ with clean and hydrogenated SiC-(3×3) probed through the unoccupied electronic states

Posseik, Francois; Lin, Y. P.; Porte, L.; Ksari, Y.; Themlin, J.-M.

doi:10.1103/PhysRevB.88.125421

Journal Article

FZJ-2014-03148

Interaction of C$_{60}$ with clean and hydrogenated SiC-(3×3) probed through the unoccupied electronic states

Posseik, F.FZJ* ; Ksari, Y. ; Lin, Y. P. ; Porte, L. ; Themlin, J.-M.

2013
APS College Park, Md.

Physical review / B 88(12), 125421 (2013) [10.1103/PhysRevB.88.125421]

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Please use a persistent id in citations: http://hdl.handle.net/2128/10791 doi:10.1103/PhysRevB.88.125421

Abstract: The effect of hydrogenation on the conduction bands of the Si-rich 6H-SiC(0001)-(3×3) reconstruction is studied using inverse photoemission spectroscopy in order to distinguish surface from bulk states. These results are exploited for the comparative study of the interaction of C60 adsorbed on (3×3) and on hydrogen-terminated (3×3). For the latter, as in the case of hydrogen-terminated Si, C60 is electronically decoupled from the substrate. Upon annealing a C60 thick film deposited on hydrogenated (3×3) up to 670 K, there is a hint for a possible hydrogen transfer to the C60 molecules. The initially physisorbed molecules then adopt covalent bonding with Si, forming the contact layer. Part of the substrate is already found uncovered at this temperature. By further annealing up to 860 K all H atoms have desorbed. Finally, at 1100 K the remaining covalently bound C60 have desorbed. Unexpectedly, the structural damages caused by H and C60 deposition and by the successive annealing steps do not prevent a final restoration of the initial (3×3) reconstruction at about 1100 K.

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