Journal Article

PreJuSER-17478

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Chemical stability the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy

Caspers, C.FZJ* ; Müller, M.FZJ* ; Gray, A. X.FZJ* ; Kaiser, A. M.FZJ* ; Gloskovskii, A.FZJ* ; Drube, W.FZJ* ; Fadley, C. S.FZJ* ; Schneider, C. M.FZJ*

2011
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/10910  doi:10.1103/PhysRevB.84.205217

Abstract: We present a detailed study of the electronic structure and chemical state of high-quality stoichiometric EuO and O-rich Eu1O1+x thin films grown directly on silicon without any buffer layer using hard x-ray photoemission spectroscopy (HAXPES). We determine the EuO oxidation state from a consistent quantitative peak analysis of 4f valence band and 3d core-level spectra. The results prove that nearly ideal, stoichiometric, and homogeneous EuO thin films can be grown on silicon, with a uniform depth distribution of divalent Eu cations. Furthermore, we identify the chemical stability of the EuO/silicon interface from Si 2p core-level photoemission. This work clearly demonstrates the successful integration of high-quality EuO thin films directly on silicon, opening up the pathway for the future incorporation of this functional magnetic oxide into silicon-based spintronic devices.

Keyword(s): J

Note: M.M. acknowledges financial support by DFG under Grant MU 3160/1-1. This work was supported by Federal Ministry of Education and Research, Germany, under contracts 813405-8 WW3 and 05K10CHB. C.S.F. acknowledges salary and travel by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the US Department of Energy under contract No. DE-AC02-05CH11231.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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