Journal Article

FZJ-2013-04965

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers

Weidlich, P. (Corresponding author)FZJ* ; Schnedler, M.FZJ* ; Eisele, H. ; Strauß, U. ; Dunin-Borkowski, R.FZJ* ; Ebert, P.FZJ*

2013
American Institute of Physics Melville, NY

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/17347  doi:10.1063/1.4816969

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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