Abstract

FZJ-2018-03822

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Confinement of charge carriers in GeSn/SiGeSn heterostructures

Rainko, D. (Corresponding author)FZJ* ; von den Driesch, N.FZJ* ; Stange, D.FZJ* ; Schulte-Braucks, C.FZJ* ; Mussler, G.FZJ* ; Povstugar, I.FZJ* ; Breuer, U.FZJ* ; Zaumseil, P. ; Capellini, G. ; Hartmann, J.-M. ; Ikonic, Z. ; Mantl, S.FZJ* ; Grützmacher, D.FZJ* ; Buca, D. M.FZJ*

2017

Please use a persistent id in citations: http://hdl.handle.net/2128/19302

Abstract: In this work, we discuss carrier confinement in double heterostructures and multiple quantum well GeSn/(Si)Ge(Sn) heterostructures, aiming for efficient light emitting devices. Several heterostructures are ep-itaxially grown and characterized in detail concerning their structural and optical properties. Theoretical band structure calculations are used to support exper-imental data and provide predictions for optimized heterostructures.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Analytik (ZEA-3)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

---

Database coverage:

---