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| Home > Publications database > Metallorganische Molekularstrahlepitaxie von InP auf GaAs-Substraten für die Herstellung metamorpher Hochfrequenztransistoren |
| Home > Publications database > Metallorganische Molekularstrahlepitaxie von InP auf GaAs-Substraten für die Herstellung metamorpher Hochfrequenztransistoren |
| Book/Report | FZJ-2020-01292 |
2001
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/24405
Report No.: Juel-3932
Abstract: The present contribution is concerned with the highly lattice-mismatched growth of InPon GaAs-substrates by metalorganic molecular beam epitaxy (MOMBE) using TMIn andprecracked phosphine as the source materials. Here the objective was to deposit device-suitableInP-layers with low surface roughness, dislocation density and electrical conductivity.Growth-optimization of InP on GaAs was carried out by applying a multitudeof characterization methods, amongst others atomic force microscopy, x-ray diffraction,photoluminescence spectroscopy and Hall-effect-measurements. In particular, for the firsttime the dependence of the surface morphology on the growth parameters was investigatedsystematically. A growth model was formulated in order to explain the corresponding observations. Furthermore, the influence of both the growth parameters and a post-growthanneal on the optical and structural properties of the deposited InP-layers was investigated. Finally AlInAs/GaInAs-HEMT-structures (High Electron Mobility Transistors)were deposited and processed for the first time on the InP buffer-layers optimized asdescribed above, which demonstrated the device-suitability of the deposited InP/GaAs-heterostructures. All in all a contribution was achieved in solving the main problem forthe implementation of InP-based devices on GaAs-substrates. The predestination of thegrowth-method MOMBE for highly lattice-mismatched systems was also demonstrated.
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