Journal Article

FZJ-2022-02705

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Review of Sublimation Growth of SiC Bulk Crystals

Wellmann, P. J. (Corresponding author) ; Arzig, M. ; Ihle, J. ; Kollmuss, M. ; Steiner, J. ; Mauceri, M. ; Crippa, D. ; La Via, F. ; Salamon, M. ; Uhlmann, N. ; Roder, M. ; Danilewsky, A. N. ; Nguyen, B. D.FZJ* ; Sandfeld, S.FZJ*

2022
Trans Tech Publications Ltd. Baech

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Please use a persistent id in citations: http://hdl.handle.net/2128/33558  doi:10.4028/p-05sz31

Abstract: The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).

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Contributing Institute(s):

1. Materials Data Science and Informatics (IAS-9)

Research Program(s):

1. 5111 - Domain-Specific Simulation & Data Life Cycle Labs (SDLs) and Research Groups (POF4-511) (POF4-511)

Appears in the scientific report 2022

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Database coverage:
; ; Allianz-Lizenz / DFG ; SCOPUS

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