Journal Article

FZJ-2020-02403

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Development of Conductive SiC x :H as a New Hydrogenation Technique for Tunnel Oxide Passivating Contacts

Qiu, K. (Corresponding author)FZJ* ; Pomaska, M.FZJ* ; Li, S.FZJ* ; Lambertz, A.FZJ* ; Duan, W.FZJ* ; Gad, A. ; Geitner, M.FZJ* ; Brugger, J.FZJ* ; Liang, Z. ; Shen, H. ; Finger, F.FZJ* ; Rau, U.FZJ* ; Ding, K.FZJ*

2020
Soc. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/33695  doi:10.1021/acsami.0c06637

Abstract: Conductive hydrogenated silicon carbide (SiCx:H) is discovered as a promising hydrogenation material for tunnel oxide passivating contacts (TOPCon) solar cells. The proposed SiCx:H layer enables a good passivation quality and features a good electrical conductivity, which eliminates the need of etching back of SiNx:H and indium tin oxide (ITO)/Ag deposition for metallization and reduces the number of process steps. The SiCx:H is deposited by hot wire chemical vapor deposition (HWCVD) and the filament temperature (Tf) during deposition is systematically investigated. Via tuning the SiCx:H layer, implied open-circuit voltages (iVoc) up to 742 ± 0.5 mV and a contact resistivity (ρc) of 21.1 ± 5.4 mΩ·cm2 is achieved using SiCx:H on top of poly-Si(n)/SiOx/c-Si(n) stack at Tf of 2000 °C. Electrochemical capacitance–voltage (ECV) and secondary ion mass spectrometry (SIMS) measurements were conducted to investigate the passivation mechanism. Results show that the hydrogenation at the SiOx/c-Si(n) interface is responsible for the high passivation quality. To assess its validity, the TOPCon stack was incorporated as rear electron selective-contact in a proof-of-concept n-type solar cells featuring ITO/a-Si:H(p)/a-Si:H(i) as front hole selective-contact, which demonstrates a conversion efficiency up to 21.4%, a noticeable open-circuit voltage (Voc) of 724 mV and a fill factor (FF) of 80%.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)
2. Helmholtz - Nanofacility (HNF)

Research Program(s):

1. 113 - Methods and Concepts for Material Development (POF3-113) (POF3-113)
2. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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