Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells

Qiu, Depeng; Lambertz, Andreas; Bittkau, Karsten; Qiu, Kaifu; Ding, Kaining; Duan, Weiyuan

doi:10.1109/PVSC43889.2021.9518937

Contribution to a conference proceedings/Contribution to a book

FZJ-2021-04539

Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells

Qiu, D. (Corresponding author)FZJ* ; Duan, W.FZJ* ; Lambertz, A.FZJ* ; Bittkau, K.FZJ* ; Qiu, K. ; Ding, K.FZJ*

2021
IEEE

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) : [Proceedings] - IEEE, 2021. - ISBN 978-1-6654-1922-2 - doi:10.1109/PVSC43889.2021.9518937
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Fort Lauderdale, USA, 20 Jun 2021 - 25 Jun 2021 IEEE 0806-0808 (2021) [10.1109/PVSC43889.2021.9518937]

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Please use a persistent id in citations: http://hdl.handle.net/2128/33699 doi:10.1109/PVSC43889.2021.9518937

Abstract: To optimize the electrical performance of silicon heterojunction solar cell devices, the electronic properties and microstructure of n-type nc-Si:H were characterized and analyzed. It was found that higher conductivity and crystalline volume fraction (Fc) of nc-Si:H can be obtained at lower silane gas fraction (fSiH4), lower power and higher phosphorous gas fraction (fPH3). In our case, there is a decline of the passivation for the devices with nc-Si:H after sputtering process. By increasing the phosphine flow fraction, the sputter damage can be reduced and 3%abs gain of FF as well as 0.7%abs gain of efficiency is reached compared with reference. The best solar cell exhibits the Voc of 733.3 mV, FF of 79.7%, Jsc of 39.00 mA/cm2 and η of 22.79% at the M2 size wafer.

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