Journal Article

PreJuSER-51545

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor thin-film structures

Gareev, R. R.FZJ* ; Bugoslavsky, Y. V. ; Schreiber, R.FZJ* ; Paul, A.FZJ* ; Sperl, M. ; Döppe, M.

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/936  doi:10.1063/1.2208552

Abstract: We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at T-g=520 K with subsequent annealing at T-g. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p-type conductivity and the Curie temperature T-C=209 K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n similar to 10(20) cm(-3) and mobility mu similar to 10 cm(2)/(V s). (c) 2006 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Streumethoden (IFF-ISM)
2. Elektronische Eigenschaften (IFF-IEE)

Research Program(s):

1. Kondensierte Materie (P54)
2. Großgeräte für die Forschung mit Photonen, Neutronen und Ionen (PNI) (P55)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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