Observation of low-temperature annealing of a primary defect in gallium nitride
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Date
Authors
Schmidt, Matthias
Janse van Rensburg, Pieter Johan
De Meyer, Hannes
Meyer, Walter Ernst
Auret, Francois Danie
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Primary defects were introduced into n-type gallium nitride (GaN) thin films by 1.6 MeV-proton bombardment at 20 K. The electronic states of these defects were investigated by means of optical space charge spectroscopy. An until now unreported primary defect, HP1, with an electronic state close to the valence band edge was detected. HP1 can be photo-ionised with photon energies of 3.4 eV. It was found to be stable up to 235 K but anneals quickly at temperatures above 240 K.
Description
Keywords
Gallium nitride (GaN), Primary defect, Annealing, Space chargespectroscopy, Photo-capacitance
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Citation
Schmidt, M, Janse van Rensburg, PJ, De Meyer, H, Meyer, WE & Auret, FD 2014, 'Observation of low-temperature annealing of a primary defect in gallium nitride', Physica B : Condensed Matter, vol. 439, pp. 64-66.