As silicon devices are pushed to their physical limit, there is currently significant academic and commercial interest in wide band gap, and ultra wide band gap semiconductors which can operate at high power densities. One such semiconductor, β-Ga2O3, is seeing significant attention in recent years due to its high band gap (4.5 - 4.9 eV), and breakdown field (8 MV/cm) which makes it a desirable material for the manufacture of high power devices and photoelectronic devices operating in the deep ultraviolet (UV) region. n-type doping of β-Ga2O3 can be increased through the use of ion implantation with Si, Ge, and Sn substituting Ga in the crystal. Monte Carlo simulations of Si, Ge, and Sn implantation in β-Ga2O3 were undertaken to determine an implantation procedure that would result in a uniform dopant concentration of 1 × 1018 cm−3 and 1 × 1019 cm−3. This implantation procedure was used to implant Si into six thin films of Ga2O3, including two grown by Molecular Beam Epitaxy (MBE) on MgO (100) substrates, two by MBE on c-plane Al2O3 (c-Al2O3) substrates, and two grown by the sol-gel process on c-Al2O3. The implanted thin films underwent thermal annealing over a temperature range from 950 ◦C to 1100 ◦C to restore damage resulting from the implantation process. The effect of annealing on the electrical, optical, and material properties of the samples was examined using UV - Vis transmission spectroscopy, X-ray Diffraction (XRD) crystallography, Atomic force Microscopy (AFM), and Hall effect measurements. Electrical measurements indicated Si implantation failed to produce conducting thin films. Results of XRD measurements and UV-Vis transmission measurements indicate that this is likely due to the diffusion of Mg and Al in the substrates into the β-Ga2O3 films, which prevents the activation of Si by occupying Ga sites.