Measurement, analysis, and modeling of 1/f noise in pentacene thin film transistors

Abstract

In order to facilitate accurate noise modeling of organic thin-film-transistors (OTFTs), we provide comprehensive experimental results and analysis of unique low frequency noise characteristics in OTFTs. We conduct drain current noise measurements for pentacene-based thin-film-transistors (TFTs) having different grain size and operating region and use the resulting data to provide detailed mechanistic understanding of the underlying noise-generation phenomena that exist in OTFTs. The results show carrier trapping by traps within the semiconductor is the dominant source of low frequency noise and can be used in conjunction with a conventional unified noise model to accurately describe the noise behavior of pentacene TFTs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622651]