Low dark current designs for mesa type SWIR photodetectors

Date

2020-01-01

Author

Şahin, Alper
Kocaman, Serdar

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Extremely low level dark current values are required for SWIR detection during the night when there is no active illumination due to weak sources and the lack of self emission. InGaAs detectors with planar pixel structures are the popular choice in SWIR range, even though there are some shortcomings such as the incompatability with dual color applications and the not tunable cut-off wavelength. To address these points, two nBn structured photodetector designs covering SWIR and extended SWIR in InGaAs material system will be discussed here.

URI

https://hdl.handle.net/11511/69932

DOI

https://doi.org/10.1117/12.2558589

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Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

A. Şahin and S. Kocaman, “Low dark current designs for mesa type SWIR photodetectors,” 2020, vol. 11407, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/69932.