Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic 
contacts for high power GaAs/InGaAs semiconductor lasers

Łaszcz, A.; Czerwinski, A.; Ratajczak, J.; Szerling, A.; Phillipp, F.; van Aken, P. A.; Katcki, J.

doi:10.1111/j.1365-2818.2009.03258.x

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Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers

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Phillipp, F.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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van Aken, P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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引用

Łaszcz, A., Czerwinski, A., Ratajczak, J., Szerling, A., Phillipp, F., van Aken, P. A., & Katcki, J. (2010). Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers. Journal of Microscopy, 237(3), 347-351.

引用: https://hdl.handle.net/11858/00-001M-0000-0010-3B67-4

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