Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam 
epitaxy

Cai, Y.; Wong, T. L.; Chan, S. K.; Sou, I. K.; Su, Dang Sheng; Wang, N.

doi:10.1063/1.3037024

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Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

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Su, Dang Sheng
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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402620ApplPhysLett93-233107.pdf
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Citation

Cai, Y., Wong, T. L., Chan, S. K., Sou, I. K., Su, D. S., & Wang, N. (2008). Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy. Applied Physics Letters, 93(23): 233107. doi:10.1063/1.3037024.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-FB5F-B

Abstract

Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.