Electronic states in arsenic-decapped MnAs (11¯00) films grown on GaAs(001): A 
photoemission spectroscopy study

Moreno, M.; Kumar, Ashwani; Tallarida, Massimo; Horn, Karsten; Ney, A.; Ploog, K. H.

doi:10.1063/1.2888953

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Electronic states in arsenic-decapped MnAs (11¯00) films grown on GaAs(001): A photoemission spectroscopy study

MPS-Authors

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Kumar, Ashwani
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Tallarida, Massimo
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Horn, Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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APL decapping final.pdf
(プレプリント), 364KB

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引用

Moreno, M., Kumar, A., Tallarida, M., Horn, K., Ney, A., & Ploog, K. H. (2008). Electronic states in arsenic-decapped MnAs (11¯00) films grown on GaAs(001): A photoemission spectroscopy study. Applied Physics Letters, 92(8):. doi:10.1063/1.2888953.

引用: https://hdl.handle.net/11858/00-001M-0000-0010-FD7C-8

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