Mature InAs quantum dots on the GaAs(114)A surface

Xu, Ming Chun; Temko, Yevgeniy; Suzuki, Takayuki; Jacobi, Karl

doi:10.1063/1.1691196

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Mature InAs quantum dots on the GaAs(114)A surface

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Xu, Ming Chun
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Temko, Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Suzuki, Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi, Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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引用

Xu, M. C., Temko, Y., Suzuki, T., & Jacobi, K. (2004). Mature InAs quantum dots on the GaAs(114)A surface. Applied Physics Letters, 84(13), 2283-2285. doi:10.1063/1.1691196.

引用: https://hdl.handle.net/11858/00-001M-0000-0011-0CD8-0

要旨

InAs quantum dots (QDs), grown by molecular-beam epitaxy on GaAs(114)A surfaces, were studied in situ by atomically resolved scanning tunneling microscopy. At their mature stage, the QDs present a complicated but regular shape being bound by flat {110}, (111)A; and {2511}A facets, and a steep part composed of rather variable combinations of {110} ,(111)A, {(1) over bar(1) over bar(1) over bar }B, and {2511} surfaces. The QD shape can be derived from mature InAs QDs on GaAs(001).