A high-resolution photoemission study of hydrogen-terminated 6H-SiC surfaces

Sieber, N.; Seyller, T.; Ley, Lothar; Polcik, Martin; James, D.; Riley, J. D.; Leckey, R. C. G.

doi:10.4028/www.scientific.net/MSF.389-393.713

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A high-resolution photoemission study of hydrogen-terminated 6H-SiC surfaces

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Polcik, Martin
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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引用

Sieber, N., Seyller, T., Ley, L., Polcik, M., James, D., Riley, J. D., & Leckey, R. C. G. (2002). A high-resolution photoemission study of hydrogen-terminated 6H-SiC surfaces. Materials Science Forum, 389-393, 713-716. doi:10.4028/www.scientific.net/MSF.389-393.713.

引用: https://hdl.handle.net/11858/00-001M-0000-0011-1670-7

要旨

We report on highly resolved photoemission spectroscopy of hydrogenated 6H-SiC(0001) and 6H-SiC(000 (1) over bar) surfaces. Chemically shifted components in the core level spectra are identified and discussed. Photon induced desorption of hydrogen due to high doses of synchrotron radiation leads to hydrogen-free and unreconstructed (1x1)-surfaces with dangling bond states within the fundamental band gap below E-F. The Mott-Hubbard picture is discussed as a possible explanation for the semi-conducting nature of unreconstructed SiC surfaces.