Giant magneto resistance in semiconducting DyNiBi

Casper, Frederick; Felser, Claudia

doi:10.1016/j.ssc.2008.08.027

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Giant magneto resistance in semiconducting DyNiBi

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Casper, F., & Felser, C. (2008). Giant magneto resistance in semiconducting DyNiBi. Solid State Communications, 148(5-6), 175-177. doi:10.1016/j.ssc.2008.08.027.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-8AE2-F

Abstract

The semiconducting half-Heulser compound DyNiBi shows a negative giant magneto resistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase. (C) 2008 Elsevier Ltd. All rights reserved.