Theoretical modeling of growth processes, extended defects, and electronic 
properties of III-nitride semiconductor nanostructures

Lymperakis, L.; Abu-Farsakh, H.; Marquardt, O.; Hickel, T.; Neugebauer, J.

doi:10.1002/pssb.201046511

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Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures

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Lymperakis, L.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Hickel, T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis, L., Abu-Farsakh, H., Marquardt, O., Hickel, T., & Neugebauer, J. (2011). Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures. Physica Status Solidi B, 248(8), 1837-1852. doi:10.1002/pssb.201046511.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-30A9-2

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