2D-material-enabled multifunctional mid-IR optoelectronics
Author(s)
Deckoff-Jones, Skylar; Wang, Yixiu; Lin, Hongtao; Wu, Wenzhuo; Hu, Juejun
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© 2020 SPIE. New narrow-gap two-dimensional (2-D) semiconductors exemplified by black phosphorus and tellurene are promising material candidates for mid-IR optoelectronic devices. In particular, tellurene, atomically thin crystals of elemental tellurium, is an emerging narrow-gap 2-D semiconductor amenable to scalable solution-based synthesis and large-area deposition. It uniquely combines tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. Here we discuß the design and experimental realization of integrated photonic devices based on tellurene and other 2-D semiconductors specifically for the mid-IR spectral regime based on a chalcogenide glaß (ChG) photonic platform.
Date issued
2020-02-26Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Proceedings of SPIE - The International Society for Optical Engineering
Publisher
SPIE
Citation
Deckoff-Jones, Skylar, Wang, Yixiu, Lin, Hongtao, Wu, Wenzhuo and Hu, Juejun. 2020. "2D-material-enabled multifunctional mid-IR optoelectronics." Proceedings of SPIE - The International Society for Optical Engineering, 11284.
Version: Final published version