Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications
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Date
2018
Journal Title
Journal ISSN
Volume Title
Publisher
Springer
Access Rights
info:eu-repo/semantics/closedAccess
Abstract
In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage (I-V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (I broken vertical bar(b)), ideality factor (n) and series resistance (R (s)) of the photodiode were determined from the analysis of I-V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.
Description
Keywords
Transition-metal complex, ruthenium/Ru(II), illumination effects
Journal or Series
Journal of Electronic Materials
WoS Q Value
Q3
Scopus Q Value
Q2
Volume
47
Issue
1
