Improving the electrical conductivity of Siligraphene SiC7 by strain

Houmad, M.; Essaoudi, I.; Ainane, Abdelmajid; El Kenz, A.; Benyoussef, A.; Ahuja, R.

doi:10.1016/j.ijleo.2018.08.123

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Improving the electrical conductivity of Siligraphene SiC₇ by strain

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Ainane, Abdelmajid
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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https://www.sciencedirect.com/science/article/pii/S0030402618312737?via%3Dihub
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Citation

Houmad, M., Essaoudi, I., Ainane, A., El Kenz, A., Benyoussef, A., & Ahuja, R. (2019). Improving the electrical conductivity of Siligraphene SiC₇ by strain. Optik, 177, 118-122. doi:10.1016/j.ijleo.2018.08.123.

Cite as: https://hdl.handle.net/21.11116/0000-0002-CB14-3

Abstract

Using the 1st principle calculations founded on Density Functional Theory (DFT), we examined the strain effect of band gap (BG) and electrical property (EP) of Siligraphene (g-SiC7) under biaxial strains (Compressive and tensile) using Generalized Gradient Approximation (GGA). We found that the BG of g-SiC7 was decreasing as function of the strain and we remarked that the electrical conductivity of g-SiC7 under biaxial strains become important of 6% for tension effect. For the compressive, we obtained an increase for all compressive applying, but we remarked the higher and lower values are successively -2% and -6%. Last not least, we deduced that it's possible to increase the electrical conductivity of g-SiC7. Also, this material can be used in solar cell applications and for photo-voltaic (PV) applications as a light donor material.